問題を解きながら、問題の「電子の総数」について疑問が生じますね。 電子の総数って、最外殻電子っていうことですか 答えは４番ですけれども、理解できませんね お願いします

問1 次の分子またはイオン (ion) a~d のうちには, 電子 (electron) の総数が同じものが 二つある。 その組み合わせを, 下の①~⑥の中から一つ選びなさい。 a F2 b NH3 © Lif d OH 1 ① a, b (2) a,c (33) a. d b, c ⑤ b, d (6) c, d

電子親和力が正であることが多いのは何故でしょうか？(画像のものは、一般的な定義に照らすと、たぶんy軸の符号が正負逆だと思います。) 前提として、 電子を受け取る前と後の原子の持つエネルギーをそれぞれE(b),E(a)とします。(before,afterに因んでます。) ま... 続きを読む

Periodic Trends in Electron Affinity for the Main Group Elements 350 Br -300 -250 -200 Se Te Po -150 0 Si C Ge -100 Bi As H -50 Ma A P Ro CS Pb B Ga In St 0 He N Be Mg Ne Ar Kr * Xe Rne Ba 50 Electron Affinity (kJ/mol)

上→電子式 下→構造式 電子式と構造式の書き方教えてください

RHEED法の原理と得られる7つの情報が、この英文に書かれているみたいなのですが、よく分かりません。 分かる方助けてください！🙇‍♂️

INTRODUCTION Reection high-energy electron diHiraction (RHEED) uses a Rnely collimated electron beam with energy of 10-100 keV. The beam irradiates a sample surface with gazing incidence to obtain forward scattered difraction patterms. RHEED enables us to analyze structures of crystal surfaces at atomic levels and also to in situ monitor growth processes of thin films (mo、1988: Ichimiya and Cohen、2004: Peng et al.. 2011). From the arrangement。intensity and profile of the dilraction spots in RHEED patterns as described below in detail、 one can obtain various kinds of information: (1) the periodicity (unit cells) in atomic arrangements. (2) flat- ness of surfaces. (3) sizes of grains/domains of surface structures and microcrystals grown on the surface. (3) epitaxial relation between the grown flms/islands with respect to the substrate. (5) parameters character- izing structural phase transitions. (6) individual atomic positions in the unit cells. and (7) growth styles of thin films and numbers of atomic layers grown. The most important advantages of the method are that it is quite easy to install the RHEED apparatus in Yarious types of vacuum chambers without interfering with other components of apparatuses and to do real- time monitoring during thin-Rlm growths. Because of these advantages.RHEED is nowwidelyusednotonlyin research Iabs of surfaces and thin fims. but also in device production processes in industry Low-energy electron diiraction (LEED、see article Low-ENNERcy ErecroN DirscmoN)。 in which an electron beam of 10-100 eV in energy is irradiated onto a sample surface with nearly normal incidence to obtain back- scattered difraction patterns. is also widely used to analyze the atomic structures of crystal surfaces. Since one has to make the sample face directly to the LEED

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15 1 @)ww Of the following have the same electron arrangement?. 外 36C 40. 3 40Ca+ 人Cl 37CI 19AT 38K+ 20Ca 交*, 3 an 38r oy 幸CL ,拉CT and 39ca ony 恋, 94r and 38KY ony 至CT 9Ar and 43K- only 38caT,提Ar and 33K-ony 41Kー K